Details

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BUY 2SK641 https://www.utsource.net/itm/p/12609185.html

Parameter	Symbol	Conditions	Min	Typ.	Max	Unit
Drain-source on-state resistance	Rds(on)	Vgs = 10V, Id = 5A	-	0.03	-	惟
Gate-source threshold voltage	Vgs(th)	Id = 1mA	2.0	2.5	3.0	V
Input capacitance	Ciss	Vds = 25V, f = 1MHz	-	800	-	pF
Output capacitance	Coss	Vds = 25V, f = 1MHz	-	170	-	pF
Reverse transfer capacitance	Crss	Vds = 25V, f = 1MHz	-	60	-	pF
Maximum drain current	Id(max)	Tc = 25掳C	-	-	10	A
Maximum gate-source voltage	Vgs(max)	Continuous	-	-	卤20	V
Maximum drain-source voltage	Vds(max)	Continuous	-	-	200	V
Total power dissipation	Ptot	Tc = 25掳C	-	-	20	W
Junction temperature	Tj	Operating range	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • The 2SK641 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.

2. Biasing:

   • Ensure that the gate-source voltage (Vgs) does not exceed the maximum rating of 卤20V to prevent damage.
   • Operate within the specified gate-source threshold voltage range to ensure reliable switching.

3. Heat Dissipation:

   • Given the maximum junction temperature of 150掳C, ensure adequate heat sinking if operating at high currents or in high ambient temperatures.

4. Capacitance Considerations:

   • Account for input, output, and reverse transfer capacitances in high-frequency applications to avoid instability or performance issues.

5. Current Limitation:

   • Do not exceed the maximum drain current (Id(max)) of 10A at 25掳C case temperature to prevent overheating and potential device failure.

6. Power Dissipation:

   • Monitor total power dissipation to stay within the 20W limit at 25掳C case temperature. Adjust derating factors as necessary for higher temperatures.

7. Storage and Operation Temperature:

   • Store and operate the device within the specified temperature range (-55掳C to 150掳C) to maintain reliability and performance.

(For reference only)