Details

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BUY 2SK3812-ZP-E https://www.utsource.net/itm/p/12609187.html

Parameter	Value	Unit
Part Number	2SK3812-ZP-E	-
Type	MOSFET	-
Configuration	N-Channel	-
Drain to Source Voltage (Vds)	600	V
Continuous Drain Current (Id)	40	A
Gate to Source Voltage (Vgs)	卤20	V
Power Dissipation (Pd)	375	W
Total Gate Charge (Qg)	300	nC
Input Capacitance (Ciss)	5600	pF
Output Capacitance (Coss)	150	pF
Reverse Transfer Capacitance (Crss)	300	pF
RDS(on) at VGS=10V	12	m惟
Junction Temperature (Tj)	-55 to +150	掳C
Storage Temperature (Tstg)	-55 to +150	掳C

Instructions:

1. Handling and Storage:

   • Store in a dry environment within the temperature range specified.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Follow standard practices for mounting semiconductor devices to prevent mechanical stress.

3. Electrical Connections:

   • Connect the gate, drain, and source terminals correctly according to your circuit design.
   • Use short leads to minimize inductance and parasitic effects.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within the specified junction temperature range to ensure reliability.

5. Testing:

   • When testing or measuring parameters, use appropriate test equipment and methods to avoid damaging the device.

6. Safety Precautions:

   • Always follow safety guidelines when working with high voltages and currents.
   • Ensure that all connections are secure and insulated as necessary.

(For reference only)