BT357S0010-A

BT357S0010-A


Specifications
Details

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Parameter Description Value
Part Number Component Identifier BT357S0010-A
Type Device Classification MOSFET
Configuration Channel Configuration N-Channel
Drain Source Voltage Maximum Voltage V(DS) 40V
Continuous Drain Current Maximum Current I(D) (25掳C) 10A
Power Dissipation Maximum Power P(TOT) 10W
Junction Temperature Operating Temperature T(J) -55掳C to +150掳C
Package Physical Enclosure TO-220
RDS(on) On-Resistance at 25掳C, VGS=10V 6.5m惟
Gate Charge Total Gate Charge Q(G) 15nC
Input Capacitance Capacitance Ciss 1180pF
Output Capacitance Capacitance Coss 360pF
Reverse Transfer Capacitance Capacitance Crss 160pF

Instructions for Use:

  1. Mounting: Ensure the device is mounted on a heatsink if operating near maximum power dissipation to maintain junction temperature within specified limits.
  2. Storage: Store in a dry environment and handle with care to avoid damage from electrostatic discharge (ESD).
  3. Soldering: Follow standard soldering practices suitable for MOSFETs; preheat the PCB to reduce thermal shock.
  4. Electrical Connections: Verify all connections are correct before applying power. Pay special attention to the gate-source voltage not exceeding the absolute maximum rating.
  5. Testing: Test the device under controlled conditions initially to ensure it meets performance specifications.
  6. Safety Precautions: Always use appropriate safety equipment when handling electrical components.
(For reference only)

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