Details

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BUY 2SK872 https://www.utsource.net/itm/p/12609231.html

Parameter	Symbol	Min	Typ.	Max	Unit
Drain-source on-state resistance (25掳C)	Rds(on)	-	10	-	m惟
Gate threshold voltage	Vgs(th)	1.0	2.0	3.0	V
Breakdown voltage	BVdss	450	-	-	V
Continuous drain current (Tc=25掳C)	Id	-	8.0	-	A
Continuous drain current (Tc=70掳C)	Id	-	6.0	-	A
Pulse drain current	Idp	-	24	-	A
Input capacitance	Ciss	-	1100	-	pF
Output capacitance	Coff	-	200	-	pF
Reverse transfer capacitance	Crss	-	290	-	pF
Total gate charge	Qg	-	45	-	nC

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage to the leads and body.
   • Avoid exposing the device to excessive heat, moisture, or mechanical stress.

2. Mounting:

   • Ensure proper mounting orientation to prevent short circuits.
   • Use appropriate thermal management techniques if operating at high currents or temperatures.

3. Biasing:

   • Apply gate-source voltage within the specified limits to ensure reliable operation.
   • Ensure that the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly.

4. Operation:

   • Operate the device within its specified temperature range to maintain performance and reliability.
   • Monitor the junction temperature to prevent overheating, especially under continuous load conditions.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive substances.
   • Keep devices in anti-static packaging until ready for use.

6. Testing:

   • Perform initial testing under controlled conditions to verify functionality.
   • Follow manufacturer guidelines for testing parameters to avoid damaging the device.

(For reference only)