FJP13007-2

FJP13007-2


Specifications
Details

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Parameter Value Unit
Part Number FJP13007-2 -
Description NPN Power Transistor -
Collector-Emitter Voltage (Vce) 70 V
Collector Current (Ic) 15 A
Power Dissipation (Ptot) 115 W
Transition Frequency (Ft) 2.5 MHz
Base-Emitter Voltage (Vbe) 5.0 V
Operating Temperature Range -55 to 150 掳C
Package Type TO-247 -

Instructions:

  1. Handling Precautions: Handle the FJP13007-2 with care to avoid damage. Use appropriate anti-static measures to prevent electrostatic discharge (ESD) damage.
  2. Mounting: Ensure proper mounting on a heatsink if operating near maximum power dissipation levels. Follow manufacturer guidelines for thermal interface materials.
  3. Soldering: Solder within recommended temperature and time limits to avoid damaging the transistor. Refer to datasheet for specific soldering profiles.
  4. Testing: Before deploying in applications, test the device under intended operating conditions to ensure it meets performance specifications.
  5. Storage: Store in a dry, cool place away from direct sunlight and corrosive environments.
  6. Applications: Suitable for high-power switching and amplification applications in industrial and automotive electronics.
(For reference only)

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