M27C512-12B1L

M27C512-12B1L


Specifications
Details

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Parameter Description Value/Details
Device Type EPROM (Erasable Programmable Read-Only Memory) M27C512-12B1L
Memory Size Total memory capacity 64 Kbits (8K x 8)
Vcc Supply Voltage Operating voltage range 4.5 V to 5.5 V
Access Time Maximum access time 120 ns
Programming Voltage Voltage required for programming Vpp = 12.5 V 卤 0.5 V
Data Retention Guaranteed data retention period 10 years
Endurance Number of program/erase cycles 1,000 cycles
Operating Temperature Temperature range for operation -40掳C to +85掳C
Package Type Type of package 28-pin PDIP (Plastic Dual In-line Package)
Erase Method Method to erase the content of the chip UV (Ultraviolet) light exposure
Standby Current Current consumption in standby mode 5 渭A (typical)
Active Current Current consumption during active operation 20 mA (typical)

Instructions for Use:

  1. Power Supply: Ensure that the Vcc is within the specified range of 4.5 V to 5.5 V.
  2. Programming: Apply a programming voltage (Vpp) of 12.5 V 卤 0.5 V when writing data to the device.
  3. Erase Operation: Expose the chip to ultraviolet light through the window on the top of the package for erasing the content. The typical erase time is approximately 20 minutes.
  4. Temperature Considerations: Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance.
  5. Handling Care: Handle the device with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection measures.
  6. Mounting: Ensure correct orientation and secure mounting of the 28-pin PDIP package on the PCB.
  7. Storage: Store in a dry environment away from direct sunlight and extreme temperatures to preserve data integrity.
(For reference only)

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