Details

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BUY VN5R003H-E https://www.utsource.net/itm/p/12609244.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 4.5V, ID = 10A	-	3.8	-	m惟
Gate-Source Voltage	VGS(th)	ID = 1mA, IG = 250渭A	0.8	-	2.0	V
Continuous Drain Current	ID	TC = 25掳C	-	-	30	A
Pulse Drain Current	IDM	TP = 10ms, Repetition Rate = 1/100	-	-	70	A
Total Power Dissipation	PD	TC = 25掳C	-	-	9.6	W
Junction Temperature	TJ	-	-	-	150	掳C
Storage Temperature Range	TSTG	-	-55	-	150	掳C

Instructions for VN5R003H-E:

1. Handling Precautions: The VN5R003H-E is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
2. Mounting: Ensure adequate heat sinking if operating near maximum power dissipation to maintain junction temperature within specified limits.
3. Gate Drive: For optimal performance, apply a gate-source voltage (VGS) that ensures the device operates within its specified on-resistance (RDS(on)) values.
4. Current Limitations: Do not exceed the continuous drain current (ID) or pulse drain current (IDM) ratings to avoid damage.
5. Temperature Monitoring: Monitor the junction temperature (TJ) to ensure it does not exceed the maximum allowable value of 150掳C.
6. Storage Conditions: Store in a dry environment within the storage temperature range (-55掳C to 150掳C).
7. Testing: Verify all parameters under the specified test conditions to ensure reliable operation.

(For reference only)