Details

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BUY STW26NM60. https://www.utsource.net/itm/p/12609255.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	BVdss	-	-	600	V	Drain-to-Source Breakdown Voltage
Continuous Drain Current	Id	-	26	-	A	Continuous Drain Current at Tc = 25掳C
Pulse Drain Current	Ipp	-	120	-	A	Pulse Drain Current (10 渭s, 1% duty)
Gate Threshold Voltage	Vgs(th)	2.0	3.5	5.0	V	Gate Threshold Voltage
On-State Resistance	Rds(on)	-	1.5	-	惟	On-State Resistance at Vgs = 10V
Input Capacitance	Ciss	-	1800	-	pF	Input Capacitance at Vds = 400V
Output Capacitance	Coss	-	250	-	pF	Output Capacitance at Vds = 400V
Reverse Transfer Capacitance	Crss	-	150	-	pF	Reverse Transfer Capacitance at Vds = 400V
Total Gate Charge	Qg	-	75	-	nC	Total Gate Charge at Vds = 400V
Switching Energy Loss	Eoss	-	200	-	nJ	Output Capacitance Energy at Vds = 400V
Junction Temperature	Tj	-55	-	150	掳C	Operating Junction Temperature Range

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is handled with care to avoid damage to the leads and the silicon.
   • Use appropriate heat sinks to manage the thermal resistance and ensure proper heat dissipation.

2. Electrical Connections:

   • Connect the drain to the high-voltage supply or load.
   • Connect the source to the ground or low-voltage side of the circuit.
   • Apply the gate voltage relative to the source to control the switching of the MOSFET.

3. Gate Drive:

   • The gate threshold voltage (Vgs(th)) is between 2.0V and 5.0V. Ensure that the gate drive voltage is sufficient to fully turn on the MOSFET.
   • For optimal performance, use a gate drive voltage of at least 10V to minimize on-state resistance (Rds(on)).

4. Thermal Management:

   • Monitor the junction temperature (Tj) to ensure it remains within the specified range (-55掳C to 150掳C).
   • Use thermal paste and heatsinks to improve thermal conductivity from the MOSFET to the heatsink.

5. Pulse Current Handling:

   • The pulse drain current (Ipp) can reach up to 120A for short durations (10 渭s, 1% duty cycle). Ensure that the circuit can handle these peak currents without overheating.

6. Capacitance and Switching:

   • Be aware of the input (Ciss), output (Coss), and reverse transfer (Crss) capacitances, which can affect switching performance and timing.
   • Minimize parasitic inductances in the gate and drain circuits to reduce switching losses and ringing.

7. Storage and Handling:

   • Store the device in a dry, cool place to prevent moisture absorption.
   • Handle the device with ESD protection to avoid damage from static electricity.

8. Safety Precautions:

   • Always follow safety guidelines when working with high voltages and currents.
   • Use appropriate protective equipment and ensure that the circuit is properly insulated.

(For reference only)