Details

---

BUY TBA120S. https://www.utsource.net/itm/p/12609276.html

Parameter	Description
Part Number	TBA120S
Type	Power Transistor
Packing	TO-220F
Collector-Emitter Voltage (Vceo)	800 V
Emitter-Base Voltage (Vebo)	7 V
Collector Current (Ic)	10 A
Power Dissipation (Ptot)	150 W
Storage Temperature (Tstg)	-65掳C to +150掳C
Operating Temperature (Tj)	-65掳C to +150掳C
Case Temperature (Tc)	-65掳C to +150掳C
hFE (DC Current Gain)	10 to 40 (at Ic = 1 A, Vce = 10 V)
Transition Frequency (ft)	3 MHz
Collector-Emitter Saturation Voltage (Vcesat)	2.5 V (at Ic = 1 A, Ib = 0.1 A)
Storage Humidity	95% RH (non-condensing)
RoHS Compliance	Yes

Instructions for Use

1. Handling Precautions:

   • Handle with care to avoid damage to the leads or the body.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

2. Mounting:

   • Ensure proper heat sinking to manage thermal dissipation.
   • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.

3. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly.
   • Use appropriate wire gauges to handle the current ratings.

4. Operational Conditions:

   • Operate within the specified voltage and current limits to avoid damage.
   • Ensure the operating temperature remains within the specified range.

5. Testing:

   • Test the transistor using a suitable multimeter or tester to verify its functionality.
   • Check for any short circuits or open circuits before installation.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and extreme temperatures.
   • Keep in original packaging until ready for use to protect from moisture and physical damage.

7. Disposal:

   • Dispose of the transistor according to local environmental regulations.
   • Recycle if possible.

(For reference only)