Details

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BUY 2SK3479 https://www.utsource.net/itm/p/12609328.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)	-	500	-	V
Gate-Source Voltage	V(GS)	-20	-	10	V
Drain Current	I(D)	-	8	-	A
Gate Threshold Voltage	V(GS(th))	1.0	2.0	3.0	V
Input Capacitance	Ciss	-	3200	-	pF
Output Capacitance	Coss	-	1200	-	pF
Reverse Transfer Capacitance	Crss	-	1000	-	pF
Drain-Source On-Resistance	R(DS(on))	-	0.5	-	惟
Power Dissipation	P(TOT)	-	160	-	W
Junction Temperature	T(j)	-55	-	175	掳C
Storage Temperature	T(stg)	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid excessive mechanical stress on the leads.
   • Handle the device with ESD (Electrostatic Discharge) protection to prevent damage.

2. Mounting:

   • Ensure proper heat sinking to manage power dissipation.
   • Use recommended soldering profiles to avoid thermal shock.

3. Biasing:

   • Apply gate-source voltage within the specified range to ensure reliable operation.
   • Monitor drain current to prevent exceeding the maximum rating.

4. Temperature Management:

   • Operate the device within the specified junction temperature range to avoid thermal runaway.
   • Store the device in a controlled environment to prevent damage from extreme temperatures.

5. Testing:

   • Use appropriate test equipment and methods to verify the device parameters.
   • Refer to the datasheet for detailed test conditions and procedures.

6. Application Notes:

   • For high-frequency applications, consider the parasitic capacitances and their impact on performance.
   • Ensure that the gate drive circuitry is designed to provide sufficient drive strength and stability.

(For reference only)