Details

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BUY AS4C256K16E0-50JC https://www.utsource.net/itm/p/12609346.html

Parameter	Description	Value
Device Type	256K x 16 CMOS Static RAM
Package Type	J-Lead Ceramic Package (J32)
Supply Voltage (Vcc)	Operating Range	4.5V to 5.5V
Access Time (tAC)	Access Time at Vcc = 5.0V, Ta = 25掳C	50 ns
Cycle Time (tCYC)	Minimum Cycle Time	50 ns
Output Enable (OE#)	Active Low
Write Enable (WE#)	Active Low
Chip Enable (CE#)	Active Low
Data Retention	Data Retention Time	20 years
Operating Temperature	Industrial Range	-40掳C to +85掳C
Storage Temperature	Storage Range	-65掳C to +150掳C
Power Consumption	Active Mode (Vcc = 5.0V)	100 mW (typical)
Standby Current	Standby Mode (Vcc = 5.0V)	20 渭A (typical)
Input Current	Maximum Input Current per Pin	卤1 mA
Output Current	Maximum Output Current per Pin	卤25 mA
Propagation Delay	Address to Data Output	50 ns (max)
Data Hold Time	Data Hold Time after WE# Rising Edge	5 ns (min)
Address Setup Time	Address Setup Time before WE# Falling Edge	10 ns (min)
Data Setup Time	Data Setup Time before WE# Falling Edge	10 ns (min)
Data Hold Time	Data Hold Time after WE# Rising Edge	5 ns (min)
Address Valid Time	Address Valid Time before OE# Falling Edge	10 ns (min)
Output Disable Time	Output Disable Time after OE# Rising Edge	15 ns (max)

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 4.5V to 5.5V.
   • Connect the ground (GND) pin to a stable ground reference.

2. Signal Timing:

   • Access Time (tAC): The device must be able to access data within 50 ns from the rising edge of the clock signal.
   • Cycle Time (tCYC): The minimum time required between consecutive accesses is 50 ns.
   • Address Setup and Hold Times: Ensure that the address lines are stable before the write enable (WE#) signal falls and remain stable until the WE# signal rises.
   • Data Setup and Hold Times: Ensure that the data lines are stable before the WE# signal falls and remain stable until the WE# signal rises.

3. Control Signals:

   • Chip Enable (CE#): Active low. When CE# is high, the device is in standby mode.
   • Output Enable (OE#): Active low. When OE# is low, the output buffers are enabled.
   • Write Enable (WE#): Active low. When WE# is low, the device enters write mode.

4. Temperature Considerations:

   • The device operates reliably within the industrial temperature range of -40掳C to +85掳C.
   • Store the device within the storage temperature range of -65掳C to +150掳C.

5. Power Consumption:

   • In active mode, the device consumes approximately 100 mW at 5.0V.
   • In standby mode, the device consumes approximately 20 渭A at 5.0V.

6. Handling:

   • Handle the device with care to avoid static discharge and physical damage.
   • Follow proper ESD (Electrostatic Discharge) precautions when handling the device.

7. Testing:

   • Before integrating the device into a system, perform initial testing to ensure it meets the specified parameters and functions correctly.

By following these instructions, you can ensure optimal performance and reliability of the AS4C256K16E0-50JC static RAM.

(For reference only)