Details

---

BUY 2SC3944A https://www.utsource.net/itm/p/12609363.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Collector-Emitter Voltage	VCE	-	-	60	V
Collector-Base Voltage	VCB	-	-	60	V
Emitter-Base Voltage	VEB	-	-	5	V
Collector Current	IC	-	-	100	mA
Base Current	IB	-	-	10	mA
Power Dissipation	PT	-	-	300	mW	TA = 25掳C
Operating Temperature	TOP	-55	-	150	掳C
Storage Temperature	TS	-65	-	150	掳C
DC Current Gain	hFE	100	200	400	-	IC = 10 mA, VCE = 10 V
Transition Frequency	fT	-	250	-	MHz	IC = 10 mA, VCE = 10 V

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to temperatures outside the specified operating range.
   • Handle with care to prevent mechanical damage or static discharge.

2. Mounting:

   • Ensure proper heat dissipation if operating near maximum power dissipation.
   • Use appropriate mounting techniques to avoid excessive mechanical stress on the leads.

3. Biasing:

   • Ensure that the base-emitter voltage (V_BE) does not exceed the maximum rating.
   • Use suitable biasing circuits to maintain stable operation.

4. Operation:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CE), collector current (I_C), and power dissipation (P_T).
   • For high-frequency applications, consider the transition frequency (f_T) to ensure the transistor operates within its intended range.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Keep in original packaging until ready for use to protect against static damage.

6. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
   • Test under controlled conditions to avoid damaging the device.

(For reference only)