M27C4001-45XF1

M27C4001-45XF1


Specifications
Details

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Parameter Description
Device Type 512K x 8-bit CMOS Electrically Erasable PROM (EEPROM)
Package 40-Pin Plastic DIP, 44-Pin PLCC
Operating Voltage VCC = 2.7V to 5.5V
Organization 512K x 8 bits
Access Time (typ) 45 ns
Page Mode Access Up to 64 bytes
Endurance 1,000,000 write/erase cycles
Data Retention 10 years at 85掳C, 100 years at 25掳C
Write Cycle Time 5 ms
Erase Cycle Time 5 ms
Operating Temperature -40掳C to +85掳C
Storage Temperature -65掳C to +150掳C
Standby Current 1 渭A (max) @ VCC = 5.5V
Active Current 30 mA (max) @ VCC = 5.5V

Instructions for Use:

  1. Power Supply Requirements:

    • Ensure the supply voltage is within the specified range of 2.7V to 5.5V.
  2. Programming:

    • The device supports byte-programming and page-programming modes.
    • For byte-programming, address and data are provided sequentially.
    • For page-programming, up to 64 bytes can be programmed in a single operation.
  3. Erasing:

    • The entire chip can be erased using the erase command.
    • Each sector can also be individually erased if supported by the specific model.
  4. Write Protection:

    • Use the hardware write protect pin to prevent accidental writes or erases.
  5. Timing Considerations:

    • Respect the specified access times to avoid data corruption.
    • Allow sufficient time for write and erase cycles before performing subsequent operations.
  6. Handling Precautions:

    • Handle with care to avoid damage from electrostatic discharge (ESD).
    • Store in a controlled environment to prevent damage from extreme temperatures.
  7. Mounting:

    • Ensure proper alignment during installation to avoid damage to pins.
    • Follow manufacturer guidelines for soldering temperature and duration.

For detailed specifications and application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)

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