Details

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BUY SN74AS850N https://www.utsource.net/itm/p/12609387.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VCC	-	4.75	5.0	5.25	V
Input Low Voltage	VIL	IL = 1.6 mA	0	-	0.8	V
Input High Voltage	VIH	IH = -20 渭A	2.0	-	5.25	V
Output Low Voltage	VOL	IL = 16 mA	0	0.4	0.5	V
Output High Voltage	VOH	IH = -400 渭A	2.7	3.5	5.0	V
Propagation Delay Time	tpd	VCC = 5V, TA = 25掳C	-	9	-	ns
Power Dissipation	PD	-	-	-	100	mW
Operating Temperature	TA	-	-40	-	85	掳C
Storage Temperature	TSTG	-	-65	-	150	掳C

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (V_CC) is within the specified range of 4.75V to 5.25V.
   • Connect the ground (GND) pin to a stable 0V reference.

2. Input Signals:

   • Input signals should be within the valid logic levels:
     • Low level (V_IL): 0V to 0.8V
     • High level (V_IH): 2.0V to 5.25V

3. Output Signals:

   • Output signals will be:
     • Low level (V_OL): 0V to 0.5V when sinking 16 mA
     • High level (V_OH): 2.7V to 5.0V when sourcing -400 渭A

4. Propagation Delay:

   • The typical propagation delay time (t_pd) is 9 ns at V_CC = 5V and T_A = 25掳C.

5. Thermal Management:

   • The device can dissipate up to 100 mW of power.
   • Ensure adequate heat dissipation if operating near the maximum power dissipation limit.

6. Temperature Range:

   • The operating temperature range is -40掳C to 85掳C.
   • The storage temperature range is -65掳C to 150掳C.

7. Handling:

   • Handle the device with care to avoid static damage.
   • Use proper ESD protection when handling the device.

8. Mounting:

   • Ensure proper mounting to maintain mechanical stability and thermal performance.
   • Follow recommended PCB layout guidelines for optimal performance.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)