Details

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BUY MG 50Q6ES40 https://www.utsource.net/itm/p/12609420.html

Parameter	Description	Value
Part Number	Full Part Number	MG 50Q6ES40
Type	Type of Component	MOSFET
Configuration	Configuration	N-Channel
VDS (Max)	Drain-to-Source Voltage	50 V
RDS(on) @ VGS=10V	On-State Resistance at VGS=10V	6 m惟
ID (Continuous)	Continuous Drain Current	40 A
Package	Package Type	TO-220
Operating Temp.	Operating Temperature Range	-55掳C to +150掳C
Gate Charge	Gate Charge	87 nC
Power Dissipation	Maximum Power Dissipation	118 W

Instructions:

1. Handling: Use appropriate anti-static precautions when handling the MG 50Q6ES40 to prevent damage from electrostatic discharge.
2. Mounting: Ensure proper heat sinking if operating near maximum current or power dissipation limits.
3. Soldering: Follow standard soldering guidelines for TO-220 packages. Avoid excessive heat during soldering to prevent damage.
4. Testing: When testing, ensure that all voltages and currents are within specified limits to avoid damaging the device.
5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

(For reference only)