Details

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BUY IXGR60N60U1 https://www.utsource.net/itm/p/12609428.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V CES				600	V
Collector Current	I C	T C = 25°C			6.0	A
Power Dissipation	P TOT	T C = 25°C			110	W
Junction Temperature	T J		-55		175	°C
Storage Temperature	T STG		-55		175	°C
Gate Charge	Q G	V GE = ±15V		48		nC
Total Gate Charge	Q GT	V GE = ±15V		53		nC
Turn-off Time	t D(off)	I C = 6A, E = 300V		90		ns
Turn-on Time	t r	I C = 6A, E = 300V		76		ns

Instructions for IXGR60N60U1:

1. Handling and Storage:

   • Ensure the device is stored within the specified storage temperature range (-55°C to 175°C).
   • Handle with care to avoid damage to the leads or body.

2. Mounting and PCB Layout:

   • Use appropriate mounting techniques to ensure good thermal contact if heatsinking is required.
   • Keep lead lengths as short as possible to minimize inductance.

3. Operating Conditions:

   • Do not exceed the maximum collector-emitter voltage (600V) or collector current (6.0A at 25°C).
   • Ensure that power dissipation does not exceed 110W at 25°C ambient temperature.

4. Gate Drive Requirements:

   • Provide sufficient gate charge (Qg ≈ 48nC) for reliable switching.
   • Pay attention to total gate charge (Qgt ≈ 53nC) for accurate timing calculations.

5. Switching Characteristics:

   • Be aware of the turn-off time (td(off) ≈ 90ns) and turn-on time (tr ≈ 76ns) when designing switching circuits.

6. Thermal Management:

   • Monitor junction temperature to stay within the safe operating range (-55°C to 175°C).
   • Implement adequate cooling solutions if operating near maximum power dissipation.

(For reference only)