40T120FDS

40T120FDS


Specifications
Details

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Parameter Value Unit
Part Number 40T120FDS -
Type N-channel MOSFET -
Voltage, Vds(max) 120 V
Current, Id(cont) 40 A
Power Dissipation 135 W
Rds(on) at 10V 4.5 m惟
Gate Charge 65 nC
Junction Temp -55 to +150 掳C
Package TO-247-3 -

Instructions:

  1. Installation: Ensure the MOSFET is mounted on a heatsink if operating near maximum current or power dissipation limits.
  2. Handling: Handle with care to avoid damage to leads and body. Use anti-static precautions.
  3. Testing: Test in-circuit resistance (Rds(on)) to verify proper functionality. Ensure gate-source voltage does not exceed rated limits.
  4. Operation: Do not exceed the maximum ratings for voltage, current, and temperature. Operate within specified safe operating area (SOA).
  5. Storage: Store in a dry environment away from direct sunlight and extreme temperatures.
(For reference only)

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