Details

---

BUY IRFD014 https://www.utsource.net/itm/p/12609482.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source On Resistance	RDS(on)	-	0.012	-	惟	VGS = 10V, ID = 20A
Gate-Source Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250渭A
Continuous Drain Current	ID	-	-	20	A	TC = 25掳C
Pulse Drain Current	IDM	-	-	78	A	tp = 10ms, TC = 25掳C
Power Dissipation	PD	-	-	36	W	TC = 25掳C
Junction to Ambient Thermal Resistance	R胃JA	-	-	62	掳C/W	-
Maximum Junction Temperature	TJ(max)	-	-	175	掳C	-

Instructions for IRFD014:

1. Installation: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation to maintain junction temperature within safe limits.
2. Gate Drive: Apply sufficient gate-source voltage (typically 10V) to ensure low on-resistance and minimize power loss.
3. Handling: Handle with care to avoid damage to the leads and body. Use appropriate ESD protection measures.
4. Operating Conditions: Do not exceed the maximum ratings listed in the table to prevent device failure.
5. Pulse Operation: For pulse operation, ensure the pulse width and frequency do not cause the average power dissipation to exceed the continuous rating.
6. Storage: Store in a dry, cool place away from direct sunlight and corrosive environments.

(For reference only)