Details

---

BUY IPD60R360P https://www.utsource.net/itm/p/12609509.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Continuous Drain Current	ID	-	36	-	A	@ TC = 25掳C, VGS = 10V
Pulse Drain Current	IDpeak	-	72	-	A	@ TC = 25掳C, VGS = 10V, t = 10ms
Gate-Source Voltage	VGS(th)	2.0	4.0	6.0	V	Gate threshold voltage
Drain-Source Breakdown	BVdss	-	600	-	V	Drain-source breakdown voltage
On-State Resistance	RDS(on)	-	0.36	-	惟	@ VGS = 10V, ID = 36A
Total Gate Charge	Qg	-	180	-	nC	@ VDS = 450V, ID = 36A, VGS = 15V
Input Capacitance	Ciss	-	5200	-	pF	@ VDS = 30V
Output Capacitance	Coss	-	470	-	pF	@ VDS = 30V
Reverse Transfer Capacitance	Crss	-	120	-	pF	@ VDS = 30V

Instructions for IPD60R360P

1. Installation:

   • Ensure proper heat sinking to manage the thermal resistance.
   • Use appropriate PCB layout techniques to minimize inductance.

2. Operating Conditions:

   • Do not exceed the maximum ratings provided in the table.
   • Keep the junction temperature within the specified limits.

3. Handling Precautions:

   • Handle with care to avoid damage to the gate oxide.
   • Follow ESD (Electrostatic Discharge) protection guidelines during handling and assembly.

4. Testing:

   • Test the device under controlled conditions to ensure it meets the specified parameters.
   • Use a suitable test setup that can provide accurate measurements of VGS, VDS, and ID.

5. Storage:

   • Store in a dry environment to prevent moisture damage.
   • Keep away from direct sunlight and extreme temperatures.

(For reference only)