Details

---

BUY 2SJ147 https://www.utsource.net/itm/p/12609574.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	800	V
Emitter-Collector Voltage	VECS	800	V
Collector-Base Voltage	VCBO	800	V
Base-Emitter Voltage	VBE	6.0	V
Continuous Collector Current	IC	3.0	A
Continuous Collector Power Dissipation	PC	120	W
Junction Temperature	TJ	-55 to 150	掳C
Storage Temperature	TSTG	-55 to 150	掳C
Transition Frequency	fT	3.0	MHz
Maximum Storage Time at TJ = 150掳C	tSTG	1000	hours

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use insulated mounting hardware to avoid short circuits.

2. Biasing:

   • Apply base current (I_B) carefully to control collector current (I_C).
   • Use a base resistor to limit base current and protect the transistor from overdrive.

3. Operation:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Operate within the recommended operating conditions to ensure reliability and longevity.

4. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Avoid exposure to extreme temperatures outside the storage temperature range.

5. Handling:

   • Handle with care to avoid mechanical stress on the leads and body.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

6. Testing:

   • Use appropriate test equipment and methods to verify parameters.
   • Follow safety guidelines to prevent electrical shock and damage to the device.

(For reference only)