Details
BUY 2SC3743 https://www.utsource.net/itm/p/12609576.html
| Parameter | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 60 | V | |
| Collector-Base Voltage | VCBO | - | - | 70 | V | |
| Emitter-Base Voltage | VEBO | - | - | 5 | V | |
| Collector Current | IC | - | - | 1.5 | A | |
| Base Current | IB | - | - | 0.15 | A | |
| Power Dissipation | PT | - | - | 30 | W | |
| Operating Junction Temperature | TJ | -55 | - | 150 | 掳C | |
| Storage Temperature Range | TSTG | -65 | - | 150 | 掳C | |
| Transition Frequency | fT | - | 200 | - | MHz | |
| DC Current Gain (hFE) | hFE | 20 | 100 | 400 | - | @ IC = 150 mA, VCE = 10 V |
Instructions for Use:
- Mounting: Ensure proper heat dissipation by mounting the transistor on a suitable heatsink if operating at high power levels.
- Biasing: Use appropriate biasing circuits to ensure stable operation within the specified current and voltage limits.
- Protection: Incorporate protective components such as diodes and resistors to prevent damage from transient voltages and currents.
- Storage: Store in a dry environment within the temperature range specified to avoid degradation.
- Handling: Handle with care to avoid mechanical damage and static discharge which can damage the device.
- Testing: Test the device using a low-power circuit initially to verify its functionality before integrating into the final application.
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