Details

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BUY 2SB648 https://www.utsource.net/itm/p/12609592.html

Parameter	Symbol	Conditions	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0	-	-	80	V
Emitter-Collector Voltage	VECC	IC = 0	-	-	80	V
Base-Emitter Voltage	VBE	IC = -5mA, IE = 0	-	-1.7	-2.5	V
Collector Current	IC	VCE = 30V	-	-	-2	A
Base Current	IB	VCE = 30V, IC = -2A	-	-	-0.2	A
Power Dissipation	PT	TA = 25掳C	-	-	125	mW
Junction Temperature	TJ	-	-	-	150	掳C

Instructions for Use:

1. Mounting: Ensure that the 2SB648 is securely mounted to a heat sink if operating at high power levels to prevent overheating.
2. Biasing: Proper biasing is crucial to ensure stable operation. The base current should be set to provide sufficient drive while avoiding excessive saturation.
3. Operating Conditions: Do not exceed the maximum ratings listed in the table. Exceeding these values can lead to device failure.
4. Storage: Store the 2SB648 in a dry, cool environment to prevent damage from moisture and temperature extremes.
5. Handling: Handle the 2SB648 with care to avoid mechanical stress or static discharge, which can damage the device.
6. Testing: When testing the 2SB648, use appropriate test equipment and follow safety guidelines to prevent injury or damage to the device.
7. Soldering: If soldering the 2SB648, ensure that the temperature does not exceed 260掳C for more than 10 seconds to avoid thermal damage.

(For reference only)