Details

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BUY G20N60B3D4 https://www.utsource.net/itm/p/12609596.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES	-	-	600	V	Maximum collector-emitter voltage
Collector Current	I C	-	-	20	A	Continuous collector current
Power Dissipation	P TOT	-	-	150	W	Total power dissipation
Junction Temperature	T J	-	-	175	掳C	Maximum junction temperature
Storage Temperature	T STG	-55	-	175	掳C	Operating temperature range
Transition Frequency	f T	-	3.5	-	MHz	Transition frequency
Gate Threshold Voltage	V GS(th)	2.0	4.0	6.0	V	Gate threshold voltage

Instructions for Use:

1. Installation and Handling:

   • Handle the G20N60B3D4 with care to avoid damage to the leads and body.
   • Ensure proper heat sinking if operating near maximum power dissipation limits.

2. Electrical Connections:

   • Connect the gate (G), drain (D), and source (S) terminals correctly as per your circuit design.
   • Apply appropriate gate drive voltages to ensure reliable switching operation.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table to prevent device failure.
   • Operate within specified temperature ranges to ensure longevity and reliability.

4. Thermal Management:

   • Monitor junction temperature to stay below the maximum limit of 175掳C.
   • Use adequate cooling methods such as heatsinks or forced air cooling if necessary.

5. Storage and Packaging:

   • Store in a dry, cool place away from direct sunlight.
   • Follow anti-static precautions during handling and storage.

6. Testing and Troubleshooting:

   • Regularly test the device parameters under controlled conditions.
   • Refer to the datasheet for troubleshooting common issues and performance verification.

(For reference only)