Details

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BUY 2N6111. https://www.utsource.net/itm/p/12609628.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CE	-	-	400	V
Emitter-Base Voltage	V(BR)EB	-5	-	-	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	3	A
Power Dissipation	Ptot	-	-	125	W
Junction Temperature	Tj	-55	-	150	掳C
Storage Temperature	Tstg	-55	-	150	掳C
Thermal Resistance	Rth(j-c)	-	1.5	-	掳C/W

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the power dissipation.
   • Handle with care to avoid damage to the leads and the junction.

2. Biasing:

   • Apply the appropriate base current to ensure the transistor operates within its safe operating area (SOA).
   • Avoid exceeding the maximum collector current and power dissipation ratings.

3. Thermal Management:

   • Monitor the junction temperature to prevent overheating, especially under high power conditions.
   • Use thermal paste between the transistor and heat sink for better thermal conductivity.

4. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Keep away from direct sunlight and extreme temperatures.

5. Electrical Connections:

   • Connect the emitter, base, and collector terminals correctly to avoid short circuits or incorrect operation.
   • Use insulated tools and equipment to prevent electrical shock.

6. Testing:

   • Test the transistor with a multimeter or a dedicated transistor tester to ensure it is functioning correctly before installation.
   • Verify the voltage and current levels during operation to ensure they are within the specified limits.

(For reference only)