Details

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BUY 2SB799-D-T1-AZ https://www.utsource.net/itm/p/12609644.html

Parameter	Description
Part Number	2SB799-D-T1-AZ
Type	PNP Bipolar Transistor
Collector-Emitter Voltage (Vce)	-80 V
Emitter-Base Voltage (Veb)	5.5 V
Collector Current (Ic)	-1 A
Power Dissipation (Ptot)	65 W at Tc = 25掳C
Transition Frequency (ft)	30 MHz
DC Current Gain (hFE)	20 to 150 at Ic = 150 mA, Vce = 5 V
Operating Temperature	-55掳C to +150掳C
Package	TO-3P (TO-3 with Plastic Cap)
Mounting Type	Through Hole

Instructions for Use:

1. Handling: Handle the 2SB799-D-T1-AZ with care to avoid damage to the leads and body. Use appropriate anti-static precautions to prevent damage from electrostatic discharge.
2. Mounting: Ensure proper alignment of the transistor during installation. The TO-3P package is designed for through-hole mounting. Secure the component firmly but avoid excessive torque on the leads which can cause mechanical stress.
3. Heat Sinking: Given its power dissipation capability, it may be necessary to use a heat sink to maintain optimal operating temperatures, especially in high-power applications.
4. Electrical Connections: Connect the collector, base, and emitter terminals correctly according to your circuit design. Refer to the pin configuration diagram typically provided in the datasheet.
5. Operating Conditions: Operate within specified voltage and current limits to ensure reliable performance and longevity of the device.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat when not in use.

(For reference only)