Details

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BUY IXER35N120D1 https://www.utsource.net/itm/p/12609662.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CES	-	-	1200	V
Emitter-Collector Voltage	V ECS	-	-	1200	V
Gate-Emitter Voltage	V GES	-15	-	15	V
Continuous Collector Current	I C	-	35	-	A	Tc = 25掳C
Pulse Collector Current	I CM	-	70	-	A	tp = 10 渭s, IGBT Turn-on
Power Dissipation	Ptot	-	-	300	W	Tc = 25掳C
Junction Temperature	T J	-55	-	150	掳C
Storage Temperature	T STG	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions: The IXER35N120D1 is sensitive to electrostatic discharge (ESD). Handle with care using appropriate ESD precautions.
2. Mounting: Ensure proper heat sinking to maintain junction temperature within specified limits. Thermal interface materials can be used between the device and heat sink.
3. Gate Drive Requirements: The gate requires a clean drive signal to avoid false triggering or excessive switching losses. Ensure the gate drive circuitry provides sufficient current to charge and discharge the gate capacitance quickly.
4. Overcurrent Protection: Implement overcurrent protection mechanisms to safeguard against conditions that could exceed the maximum collector current ratings.
5. Storage and Operation Temperature: Operate and store the device within the specified temperature ranges to ensure reliable performance and longevity.
6. Soldering: Follow recommended soldering profiles to prevent thermal damage. Avoid exposing the device to temperatures exceeding its storage temperature limit during soldering operations.

(For reference only)