TPCA8125,L1Q

TPCA8125,L1Q


Specifications
Details

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Parameter Description Value
Part Number Device Identifier TPCA8125, L1Q
Type Type of Component Power MOSFET
Package Package Type TO-263 (D2PAK)
VDS (Max) Maximum Drain-to-Source Voltage 60V
RDS(on) @ VGS=10V On-State Resistance at Gate-to-Source Voltage of 10V 4.7 m惟
ID (Max) Maximum Drain Current 75A
Power Dissipation Maximum Power Dissipation (at Tc = 25掳C) 235W
Operating Temperature Range Operating Junction Temperature Range -55掳C to 150掳C
Storage Temperature Range Storage Temperature Range -65掳C to 150掳C
Gate Charge Total Gate Charge 95 nC
Input Capacitance Input Capacitance at VGS = 0V and f = 1 MHz 1400 pF
Output Capacitance Output Capacitance at VDS = 10V and f = 1 MHz 180 pF

Instructions for Use:

  1. Handling: Handle the device with care to avoid damage to the leads and body. Electrostatic discharge (ESD) sensitive; use proper ESD precautions.
  2. Mounting: Ensure that the mounting surface is flat and clean. Apply thermal compound if necessary to improve heat dissipation.
  3. Soldering: Preheat the PCB to reduce thermal shock. Use a soldering temperature not exceeding 260掳C for no more than 10 seconds per joint.
  4. Testing: Before installing into final applications, test the device parameters using standard test circuits to ensure it meets specifications.
  5. Storage: Store in original packaging in a dry, cool place away from direct sunlight and sources of heat.
(For reference only)

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