K2476

K2476


Specifications
Details

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Parameter Description Value
Part Number Component Identifier K2476
Type Device Type MOSFET
Vds (V) Drain-to-Source Voltage 60V
Id (A) Continuous Drain Current 24A
Rds(on) (m惟) On-State Resistance at Vgs = 10V 8.5 m惟
Vgs(th) (V) Gate Threshold Voltage 2 - 4V
Qg (nC) Total Gate Charge 65 nC
Package Housing Type TO-220
Operating Temp Junction Temperature Range -55掳C to 150掳C

Instructions for Use:

  1. Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum current to maintain junction temperature within specified limits.
  2. Gate Drive: Apply gate voltage carefully, ensuring it does not exceed the maximum threshold to prevent damage.
  3. Storage: Store in a dry environment away from direct sunlight and excessive heat.
  4. Handling: Handle with care to avoid static damage; use appropriate ESD protection measures.
  5. Installation: Follow manufacturer guidelines for soldering and installation to ensure reliable performance.
  6. Testing: Before full-scale application, test the device under controlled conditions to validate performance parameters.
(For reference only)

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