8550C

8550C


Specifications
Details

BUY 8550C https://www.utsource.net/itm/p/12609693.html

Parameter Value/Description
Type PNP Bipolar Transistor
Collector-Emitter Voltage (Vce) -50V
Emitter-Base Voltage (Veb) -5V
Collector Current (Ic) -1.5A
Power Dissipation (Ptot) 625mW
Transition Frequency (ft) 300MHz
Storage Temperature Range -65掳C to +150掳C
Operating Temperature Range -65掳C to +150掳C
Package Type TO-92

Instructions for Use:

  1. Handling Precautions: Handle the 8550C with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection measures.
  2. Mounting: Ensure correct orientation when mounting on a PCB. The flat side of the TO-92 package typically indicates the emitter terminal.
  3. Thermal Management: Given its power dissipation limit, ensure adequate heat sinking if operating near maximum current or in high ambient temperatures.
  4. Biasing: Proper biasing is crucial for optimal performance. Refer to application notes for recommended biasing circuits.
  5. Testing: Test the device within specified voltage and current limits to prevent damage.
(For reference only)

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