Details

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BUY NTD6N20E https://www.utsource.net/itm/p/12609697.html

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source Voltage	VDSS		-		200	V
Gate-Source Voltage	VGS		-10		10	V
Continuous Drain Current	ID	VDSS = 20V, Tc = 25掳C	-	6	-	A
Pulse Drain Current	IDM	VDSS = 20V, Tc = 25掳C, t = 10ms	-	18	-	A
Power Dissipation	PD	Tc = 25掳C	-		120	W
Junction Temperature	TJ		-55		150	掳C
Storage Temperature	TSTG		-55		150	掳C
Thermal Resistance (Junction to Case)	R胃JC	-		1.5	-	掳C/W

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (VDSS) does not exceed 200V.
   • The gate-source voltage (VGS) should be kept within 卤10V.

2. Current Ratings:

   • The continuous drain current (ID) should not exceed 6A at 25掳C case temperature.
   • For pulse conditions, the maximum drain current (IDM) is 18A for a pulse duration of 10ms at 25掳C case temperature.

3. Power Dissipation:

   • The power dissipation (PD) should not exceed 120W at 25掳C case temperature.

4. Temperature Considerations:

   • The junction temperature (TJ) should be maintained between -55掳C and 150掳C.
   • The storage temperature (TSTG) range is also -55掳C to 150掳C.

5. Thermal Management:

   • Ensure proper heat sinking to manage thermal resistance (R胃JC) effectively, which is 1.5掳C/W.

6. Handling Precautions:

   • Handle the device with care to avoid static damage.
   • Follow proper soldering techniques to prevent thermal shock.

7. Application Notes:

   • Refer to the datasheet for detailed application notes and circuit diagrams.
   • Use appropriate gate drive circuits to ensure reliable operation.

(For reference only)