Details

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BUY SST39SF010A-70-4C-NH https://www.utsource.net/itm/p/12609700.html

Parameter	Description
Device	SST39SF010A-70-4C-NH
Type	Flash Memory
Memory Size	1 Mbit (128K x 8)
Voltage - Supply	VCC = 2.7V to 3.6V
Temperature	Industrial: -40掳C to +85掳C
Programming Voltage	VPP = 12.0V 卤 0.5V
Package	44-TSSOP
Speed	70ns Access Time
Organization	128K x 8 bit
Technology	CMOS
Erase Method	Sector Erase, Chip Erase
Write Cycle Time	5ms Typical
Endurance	100,000 Program/Erase Cycles
Data Retention	20 years

Instructions:

1. Power Supply: Ensure the supply voltage (VCC) is within the specified range of 2.7V to 3.6V.
2. Programming Voltage: Use a programming voltage (VPP) of 12.0V 卤 0.5V for write operations.
3. Operating Temperature: Operate within the industrial temperature range of -40掳C to +85掳C.
4. Access Time: The device has an access time of 70ns.
5. Writing Data: Writing data requires a typical cycle time of 5ms.
6. Erase Operations: Supports both sector and chip erase functions.
7. Endurance and Retention: The memory can withstand up to 100,000 program/erase cycles and retains data for up to 20 years.
8. Package Handling: Handle the 44-TSSOP package with care to avoid damage to pins and ensure proper soldering during installation.

(For reference only)