Details

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BUY 2SB1163A https://www.utsource.net/itm/p/12609705.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0	-	-	80	V
Emitter-Collector Voltage	VECE	IE = 0	-	-	80	V
Base-Emitter Voltage	VBE	IC = -1mA, f = 1Hz	-2.5	-	-1.5	V
Collector Current	IC	VCE = 30V	-	-	3	A
DC Current Gain	hFE	IC = -1A, VCE = -10V	75	250	600	-
Transition Frequency	fT	IC = -10mA	-	400	-	MHz
Power Dissipation	PD	TA = 25掳C	-	-	125	mW
Storage Temperature	Tstg	-	-55	-	150	掳C
Operating Temperature	TJ	-	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions: The 2SB1163A is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits.
3. Biasing: For optimal performance, ensure the base-emitter junction is biased within specified voltage limits.
4. Operation Limits: Do not exceed the maximum ratings listed in the table to prevent damage or reduced lifespan.
5. Storage and Environment: Store in a dry environment and operate within the specified temperature range to avoid degradation of performance characteristics.

(For reference only)