Details

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BUY N82S131AN https://www.utsource.net/itm/p/12609718.html

Parameter	Description	Value	Unit
Device Type	High-Speed CMOS Static RAM
Organization	8K x 8		bits
Supply Voltage (Vcc)	Operating voltage	2.5 to 3.6	V
Standby Current	Quiescent current in standby mode	1	渭A
Active Current	Current consumption during active operation	40	mA
Access Time	Time required for read/write operations	10	ns
Data Retention Time	Duration data is retained without power	20	years
Operating Temperature	Temperature range for reliable operation	-40 to +85	掳C
Package Type	Physical package	SOIC-18
Pin Count	Number of pins	18

Instructions for Use:

1. Power Supply Connection:

   • Connect the Vcc pin to a stable power supply between 2.5V and 3.6V.
   • Ensure the GND pin is properly grounded.

2. Signal Timing:

   • Ensure all control signals (CE, OE, WE) are synchronized with the system clock to avoid data corruption.
   • Maintain proper setup and hold times for address and data lines as specified in the datasheet.

3. Write Operation:

   • Set the Write Enable (WE) signal low to initiate a write cycle.
   • Provide the address and data within the specified timing constraints.

4. Read Operation:

   • Set the Output Enable (OE) signal low to initiate a read cycle.
   • The data will be available on the data bus after the specified access time.

5. Standby Mode:

   • To enter standby mode, set the Chip Enable (CE) high. This minimizes power consumption.

6. Handling Precautions:

   • Handle the device with care to prevent electrostatic discharge (ESD) damage.
   • Follow anti-static protocols when handling or installing the device.

7. Storage:

   • Store the device in an ESD-safe environment when not in use.
   • Avoid exposure to extreme temperatures and humidity.

(For reference only)