Details

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BUY 2SC4981 https://www.utsource.net/itm/p/12609745.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	90	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	15	-	A
Base Current	IB	-	1.5	-	A
Power Dissipation	PT	-	-	130	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance	R胃JC	-	1.6	-	掳C/W

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use recommended mounting torque for screws to avoid damage.

2. Biasing:

   • Apply appropriate base current to ensure the transistor operates in the desired region (saturation, active, or cutoff).
   • Avoid excessive base current to prevent thermal runaway.

3. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage, collector current, and power dissipation.
   • Monitor the junction temperature to ensure it does not exceed 150掳C.

4. Storage:

   • Store the transistor in a dry, cool environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the leads and body.

5. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
   • Test under controlled conditions to avoid damaging the device.

6. Soldering:

   • Use a soldering iron with a temperature-controlled tip to prevent thermal shock.
   • Solder quickly to minimize exposure to high temperatures.

7. Applications:

   • Suitable for high-power audio amplifiers, switching circuits, and other applications requiring high current and voltage handling.

(For reference only)