Details

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BUY STGW20NB60H https://www.utsource.net/itm/p/12609753.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	600	-	V	IC = 0, Tj = 25掳C
Emitter-Collector Voltage	VECS	-	600	-	V	IE = 0, Tj = 25掳C
Collector-Base Voltage	VCBO	-	600	-	V	IC = 0, IB = 0, Tj = 25掳C
Emitter-Base Voltage	VEBO	-	7	-	V	IE = 1 mA, Tj = 25掳C
Continuous Collector Current	IC	-	20	-	A	TC = 25掳C
Continuous Emitter Current	IE	-	20	-	A	TC = 25掳C
Power Dissipation	PTOT	-	240	-	W	TC = 25掳C
Junction Temperature	Tj	-	-	175	掳C	-
Storage Temperature Range	Tstg	-40	-	150	掳C	-

Instructions for Use:

1. Mounting:

   • Ensure that the device is mounted on a heatsink to manage the thermal dissipation effectively.
   • Use thermal paste between the device and the heatsink to improve heat transfer.

2. Electrical Connections:

   • Connect the collector (C) to the high-voltage side of the circuit.
   • Connect the emitter (E) to the low-voltage side or ground.
   • The base (B) should be connected to the control circuit to drive the transistor.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Ensure that the junction temperature (T_j) does not exceed 175掳C.
   • Keep the storage temperature within the range of -40掳C to 150掳C.

4. Handling:

   • Handle the device with care to avoid mechanical damage.
   • Use appropriate ESD protection measures to prevent damage from static electricity.

5. Testing:

   • Before final assembly, test the device under controlled conditions to ensure it meets the required specifications.
   • Perform regular checks to monitor the performance and condition of the device.

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against moisture and physical damage.

(For reference only)