1NV04S

1NV04S


Specifications
Details

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Parameter Description Value Unit
Part Number Device Identifier 1NV04S -
Type Component Type Diode -
Material Semiconductor Material Silicon -
Maximum Repetitive Peak Reverse Voltage (VRRM) Max reverse voltage it can withstand repeatedly 400 V
Maximum Average Rectified Forward Current (IF(AV)) Continuous forward current at specified conditions 1.0 A
Peak Surge Forward Current (IFSM) Non-repetitive peak forward surge current 30 A
Junction Operating Temperature (TJ) Range of temperatures for junction operation -55 to +175 掳C
Storage Temperature (TSTG) Range of temperatures for storage -65 to +150 掳C

Instructions for Use:

  1. Handling Care: Handle the 1NV04S diode with care to avoid damage to the leads and body. Use appropriate anti-static measures.
  2. Mounting: Ensure that the mounting orientation is correct as per the circuit diagram. Securely mount the diode to prevent mechanical stress on the leads.
  3. Soldering: Use a controlled temperature soldering iron not exceeding 300掳C for a maximum duration of 10 seconds per connection point to avoid thermal damage.
  4. Electrical Stress: Do not exceed the maximum ratings listed in the table. Ensure that the operating conditions are within the specified limits for reliable performance.
  5. Thermal Management: For applications involving high current or power, consider heat sinks or other cooling methods to maintain the junction temperature within the operational range.
  6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat. Follow the storage temperature guidelines provided.
  7. Testing: Before installation, test the diode using a multimeter or a dedicated tester to ensure it is functioning correctly.
(For reference only)

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