Details

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BUY 40N135IHR https://www.utsource.net/itm/p/12609786.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown Voltage	V(BR)DSS	-	650	-	V	-
Gate-Source Voltage	VGS	-20	-	20	V	-
Continuous Drain Current (Tc = 25掳C)	ID	-	135	-	A	-
Continuous Drain Current (Tc = 100掳C)	ID	-	80	-	A	-
Pulse Drain Current (t = 10 ms, Duty Cycle = 1%)	IGM	-	360	-	A	-
Total Power Dissipation (Tc = 25掳C)	PD	-	250	-	W	-
Total Power Dissipation (Tc = 100掳C)	PD	-	150	-	W	-
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature Range	TSTG	-55	-	150	掳C	-
Thermal Resistance, Junction to Case	R胃JC	-	0.4	-	掳C/W	-
Input Capacitance	Ciss	-	1200	-	pF	VDS = 400V, VGS = 0V
Output Capacitance	Coss	-	120	-	pF	VDS = 400V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	150	-	pF	VDS = 400V, VGS = 0V
Gate Charge	Qg	-	115	-	nC	VGS = 15V, VDS = 400V, ID = 50A
Turn-On Delay Time	tdon	-	100	-	ns	VGS = 15V, VDS = 400V, ID = 50A
Rise Time	tr	-	50	-	ns	VGS = 15V, VDS = 400V, ID = 50A
Turn-Off Delay Time	tdoff	-	120	-	ns	VGS = 15V, VDS = 400V, ID = 50A
Fall Time	tf	-	70	-	ns	VGS = 15V, VDS = 400V, ID = 50A

Instructions for Use:

1. Handling and Storage:

   • Store the 40N135IHR in a dry environment with temperatures between -55掳C and 150掳C.
   • Handle the device with care to avoid mechanical damage and static discharge.

2. Mounting:

   • Ensure proper heat sinking to manage thermal resistance and maintain junction temperature within safe limits.
   • Use appropriate mounting hardware to secure the device and ensure good thermal contact.

3. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly to avoid damage.
   • Use short leads to minimize parasitic inductance and capacitance.

4. Operating Conditions:

   • Do not exceed the maximum ratings for drain-source voltage, gate-source voltage, and continuous drain current.
   • Ensure that the total power dissipation does not exceed the specified limits for the given case temperature.

5. Switching Performance:

   • Optimize gate drive circuitry to minimize switching times and reduce switching losses.
   • Consider the gate charge and capacitances when designing the gate drive circuit.

6. Thermal Management:

   • Monitor the junction temperature to prevent overheating.
   • Use thermal simulation tools to design effective cooling solutions.

7. Testing:

   • Perform initial testing under controlled conditions to validate the design.
   • Regularly inspect the device for signs of wear or damage during operation.

8. Safety:

   • Follow all relevant safety guidelines and regulations when handling and operating high-voltage and high-current devices.
   • Use appropriate protective equipment and grounding techniques.

(For reference only)