Details

---

BUY IXTA3N120 TRL https://www.utsource.net/itm/p/12609799.html

Parameter	Symbol	Value	Unit	Test Conditions
Collector-Emitter Breakdown Voltage	V(BR)CEO	1200	V	IC = 25mA, TJ = 25掳C
Collector-Emitter Saturation Voltage	VCE(sat)	1.8	V	IC = 10A, IB = 1A, TJ = 25掳C
Emitter-Base Breakdown Voltage	V(BR)EBO	7	V	IE = 1mA, TJ = 25掳C
Continuous Collector Current	IC	36	A	TC = 25掳C
Pulse Collector Current	ICM	144	A	TP = 10ms, TC = 25掳C
Storage Temperature Range	TSTG	-55 to 150	掳C	-
Operating Junction Temperature	TJ	-55 to 150	掳C	-

Instructions for Use:

1. Handling Precautions: The IXTA3N120 TRL is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking when mounting the device to manage operating temperatures within specified limits.
3. Biasing: Carefully set biasing conditions to avoid exceeding maximum ratings for collector-emitter voltage and collector current.
4. Testing: Perform all tests at room temperature unless otherwise specified. For accurate performance evaluation, ensure test conditions match those listed in the parameter table.
5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat to prevent degradation.
6. Application: Suitable for applications requiring high-voltage switching and power management circuits.

(For reference only)