Details

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BUY D209L. https://www.utsource.net/itm/p/12609854.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Forward Voltage	Vf	-	1.2	1.8	V	Voltage at If = 20 mA
Reverse Current	Ir	-	100	-	nA	At Vr = 5 V, T = 25掳C
Peak Forward Current	Ifsm	-	-	100	mA	Non-repetitive, t = 10 ms
Operating Temperature	Topr	-40	-	85	掳C	Operating temperature range
Storage Temperature	Tstg	-40	-	150	掳C	Storage temperature range
Thermal Resistance	Rth	-	300	-	K/W	Junction to ambient
Wavelength	位	633	-	650	nm	Emission wavelength

Instructions for Use:

1. Forward Voltage (Vf):

   • Ensure that the forward voltage applied does not exceed the maximum value of 1.8 V when operating at 20 mA to prevent damage to the diode.

2. Reverse Current (Ir):

   • The reverse current should be kept below 100 nA at a reverse voltage of 5 V and a temperature of 25掳C to avoid excessive leakage.

3. Peak Forward Current (Ifsm):

   • The peak forward current should not exceed 100 mA for non-repetitive pulses with a duration of 10 ms to prevent thermal damage.

4. Operating Temperature (Topr):

   • The device is designed to operate within a temperature range of -40掳C to 85掳C. Ensure that the operating environment stays within this range to maintain performance and reliability.

5. Storage Temperature (Tstg):

   • Store the device in an environment where the temperature ranges from -40掳C to 150掳C to prevent degradation.

6. Thermal Resistance (Rth):

   • The thermal resistance from the junction to the ambient is typically 300 K/W. Ensure adequate heat dissipation to keep the junction temperature within safe limits.

7. Wavelength (位):

   • The emission wavelength of the diode is between 633 nm and 650 nm, making it suitable for applications requiring red light.

Handling and Mounting:

• Handle the diode with care to avoid mechanical stress.
• Ensure proper soldering techniques to prevent thermal shock.
• Use appropriate circuit protection to safeguard against overvoltage and overcurrent conditions.

(For reference only)