Details

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BUY MJE200G https://www.utsource.net/itm/p/12609910.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	100	V	IC = 0.5A, Tc = 25掳C
Emitter-Collector Voltage	VECEO	-	-	100	V	IC = 0.5A, Tc = 25掳C
Collector-Base Voltage	VCBO	-	-	100	V	IC = 0, Tc = 25掳C
Emitter-Base Voltage	VEBO	-	-5	-6	V	IE = 5mA, Tc = 25掳C
Collector Current	IC	-	-	0.5	A	VCE = 1V, Tc = 25掳C
DC Current Gain	hFE	25	75	200	-	IC = 150mA, VCE = 10V
Transition Frequency	fT	-	30	-	MHz	IC = 150mA, VCE = 1V
Storage Temperature	Tstg	-65	-	150	掳C
Junction Temperature	TJ	-65	-	150	掳C

Instructions for MJE200G:

1. Handling and Storage:

   • Store the device in a dry environment within the specified storage temperature range (-65掳C to +150掳C).
   • Handle with care to avoid damage to leads and body.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Avoid mechanical stress on the leads during soldering and mounting.

3. Electrical Connections:

   • Connect the emitter lead directly to the ground plane to minimize noise pickup.
   • Use short leads to reduce parasitic inductance and capacitance effects.

4. Operating Conditions:

   • Do not exceed the maximum ratings provided in the table.
   • Ensure that the junction temperature does not exceed 150掳C to prevent thermal runaway.

5. Testing and Troubleshooting:

   • Measure VCE to check for proper biasing and operation.
   • Verify hFE to ensure adequate current gain for the application.

6. Application Notes:

   • Refer to manufacturer datasheets for detailed application circuits and typical performance graphs.
   • Consider using bypass capacitors to stabilize supply voltages and reduce noise.

This information should help in effectively using the MJE200G transistor in various electronic designs.

(For reference only)