Details

---

BUY 2SC2979 https://www.utsource.net/itm/p/12609913.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	IC = 0.5 mA	-	-	40	V
Collector-Base Voltage	V(BR)CBO	IE = 0	-	-	60	V
Emitter-Base Voltage	V(BR)EBO	IC = 5 mA	-	-	6	V
Collector Current	IC	VCE = 30 V	-	1	2	A
DC Current Gain	hFE	IC = 150 mA, VCE = 5 V	50	200	400	-
Transition Frequency	fT	IC = 150 mA, VCE = 5 V	-	150	-	MHz
Power Dissipation	PD	Ta = 25掳C	-	-	125	mW
Junction Temperature	Tj	Operating range	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table to prevent damage to the transistor.
   • Use appropriate heat sinking if operating near the maximum power dissipation.

2. Biasing and Operation:

   • Ensure that the base-emitter voltage (VBE) is within the specified limits to avoid excessive current.
   • For optimal performance, operate within the typical values of hFE (DC current gain).

3. Storage and Environment:

   • Store in a dry environment away from high temperatures and humidity.
   • Operate within the specified junction temperature range to ensure reliability.

4. Mounting:

   • Follow recommended mounting procedures to ensure proper thermal transfer and mechanical stability.
   • Ensure good electrical connections to all terminals.

5. Testing:

   • When testing or measuring parameters, use conditions as close as possible to those specified in the parameter table for accurate results.

(For reference only)