Details

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BUY G5318RE1D https://www.utsource.net/itm/p/12609934.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	G5318RE1D	-
Type	Device Type	MOSFET	-
Configuration	Channel Type	N-Channel	-
VDS	Drain-Source Voltage	60	V
VGS	Gate-Source Voltage	卤20	V
ID	Continuous Drain Current	4.7	A
RDS(on)	On-State Resistance at VGS=10V	0.015	惟
Power Dissipation	Maximum Power Dissipation	0.9	W
Operating Temp	Junction Temperature Range	-55 to +150	掳C
Package	Enclosure Type	TO-252 (DPAK)	-

Instructions for Use:

1. Handling Precautions: The G5318RE1D is an electrostatic discharge (ESD) sensitive device. Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper mounting on a heatsink if operating near maximum power dissipation limits to maintain junction temperature within specified range.
3. Biasing: Apply gate voltages within the specified VGS limits to avoid damage or unreliable operation.
4. Current Limitation: Do not exceed the continuous drain current rating. For pulse applications, ensure average power dissipation does not exceed the maximum rated power.
5. Storage: Store in original packaging in a dry environment to prevent moisture damage. Follow recommended storage practices for semiconductor devices.
6. Testing: When testing the device, use low voltage/current settings initially to prevent accidental damage. Always refer to the data sheet for specific test conditions.

(For reference only)