Details

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BUY IRG4PH50U G4PH50U https://www.utsource.net/itm/p/12609986.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Input Voltage	VIN			650	V	Maximum Input Voltage
Continuous Drain Current	ID		12		A	Continuous Drain Current at Tc = 25掳C
Pulse Drain Current	IGM		78		A	Pulse Drain Current (t = 10 渭s)
On-State Resistance	RDS(on)	0.14			惟	On-State Resistance at VGS = 10V, ID = 12A
Gate Charge	QG		43		nC	Total Gate Charge
Turn-on Delay Time	tdon		26		ns	Turn-on Delay Time
Rise Time	tr		14		ns	Rise Time
Turn-off Delay Time	tdoff		18		ns	Turn-off Delay Time
Fall Time	tf		14		ns	Fall Time

Instructions for IRG4PH50U G4PH50U

1. Handling Precautions:

   • Avoid exposing the device to excessive heat or moisture.
   • Use proper anti-static precautions when handling the device.

2. Mounting and PCB Layout:

   • Ensure good thermal management by providing adequate heatsinking.
   • Keep leads short to minimize inductance and improve switching performance.

3. Operating Conditions:

   • Operate within specified voltage and current limits to prevent damage.
   • Ensure gate drive voltage is sufficient for optimal on-state resistance.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Follow manufacturer guidelines for long-term storage conditions.

5. Testing:

   • Verify all parameters using recommended test circuits provided in the datasheet.
   • Perform testing in controlled environments to ensure accurate measurements.

6. Application Notes:

   • Refer to application notes for detailed information on integrating this device into specific circuit designs.
   • Pay attention to recommended operating conditions and derating factors for reliable operation.

(For reference only)