Details

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BUY CY7C185-35VC. https://www.utsource.net/itm/p/12610000.html

Parameter	Description	Value	Unit
Device Type	High-Speed CMOS Static RAM	-	-
Organization	Organization	16K x 8	bits
Supply Voltage (VCC)	Operating Supply Voltage	3.3	V
Standby Current (ISB)	Supply Current in Standby Mode	20	渭A
Active Current (IACT)	Supply Current in Active Mode	150	mA
Access Time (tAC)	Access Time from Address Valid to Data Valid	35	ns
Cycle Time (tCYC)	Minimum Cycle Time	45	ns
Output Enable (OE)	Output Enable Input Low to Data Valid	15	ns
Write Enable (WE)	Write Enable Input Low to Data Latch	15	ns
Address Setup (tAS)	Address Setup Time Before Clock Edge	10	ns
Address Hold (tAH)	Address Hold Time After Clock Edge	5	ns
Data Setup (tDS)	Data Setup Time Before Write Enable Low	10	ns
Data Hold (tDH)	Data Hold Time After Write Enable High	5	ns
Power Down (PD)	Power Down Mode	-	-
Operating Temperature	Operating Temperature Range	-40 to +85	掳C
Storage Temperature	Storage Temperature Range	-65 to +150	掳C
Package	Package Type	TSSOP-28	-

Instructions for Use:

1. Power Supply:

   • Connect VCC to a 3.3V power supply.
   • Ensure a stable power supply to avoid data corruption.

2. Addressing:

   • Apply the desired address to the address lines (A0-A13) before the address setup time (tAS).
   • Maintain the address lines stable during the access time (tAC).

3. Data Read:

   • Set the Output Enable (OE) low to enable data output.
   • Data will be valid after the output enable delay (tOE).

4. Data Write:

   • Set the Write Enable (WE) low to initiate a write operation.
   • Ensure data is stable on the data lines (D0-D7) before the data setup time (tDS).
   • Hold the data stable until after the data hold time (tDH).

5. Power Down:

   • To enter power-down mode, set both OE and WE high.
   • This reduces power consumption but retains the memory contents.

6. Temperature Considerations:

   • Operate the device within the specified operating temperature range (-40掳C to +85掳C) to ensure reliable performance.
   • Store the device within the storage temperature range (-65掳C to +150掳C) to prevent damage.

7. Handling:

   • Handle the device with care to avoid static discharge, which can damage the sensitive components.
   • Follow proper ESD (Electrostatic Discharge) precautions during handling and installation.

(For reference only)