Details

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BUY M48T08-100PC1 https://www.utsource.net/itm/p/12610023.html

Parameter	Description	Value
Part Number	Full Part Number	M48T08-100PC1
Function	Real-Time Clock (RTC) with Non-Volatile SRAM
Memory Size	SRAM Size	1024 bits (128 x 8)
Operating Voltage	Vcc Range	2.5V to 5.5V
Current Consumption	Active Mode	1 渭A (typical)
Standby Current	Standby Mode	500 nA (typical)
Temperature Range	Operating Temperature	-40掳C to +85掳C
Clock Accuracy	卤20 ppm at 25掳C
Package Type	Package	SOIC-8
Pin Configuration	Pin Count	8
Communication Interface	Interface	I2C
Write Protection	Write Protect	Hardware and Software
Battery Backup	Battery Backup	Yes
Endurance	Write Cycles	1,000,000 cycles
Data Retention	Data Retention	10 years (typical)

Instructions for Use

1. Power Supply:

   • Connect Vcc to a power supply within the range of 2.5V to 5.5V.
   • Connect GND to the ground.

2. I2C Communication:

   • SDA (Serial Data Line) and SCL (Serial Clock Line) must be connected to the corresponding lines of the I2C bus.
   • Ensure pull-up resistors are used on both SDA and SCL lines to Vcc.

3. Battery Backup:

   • Connect a backup battery to the Vbat pin to maintain the clock and memory during power loss.
   • The battery should have a voltage within the range of 2.5V to 5.5V.

4. Write Protection:

   • To enable hardware write protection, connect the WP (Write Protect) pin to Vcc.
   • To disable hardware write protection, connect the WP pin to GND.
   • Software write protection can be configured via specific register settings.

5. Initialization:

   • After power-on, initialize the RTC by setting the time and date registers.
   • Use the I2C commands to read and write data to the SRAM.

6. Reading Time and Date:

   • Use the I2C read command to access the time and date registers.
   • The registers are typically located at addresses 0x00 to 0x06.

7. Writing Time and Date:

   • Use the I2C write command to set the time and date registers.
   • Ensure the values are in BCD (Binary-Coded Decimal) format.

8. Reading and Writing SRAM:

   • Access the SRAM by reading from or writing to the memory addresses starting from 0x08.
   • The SRAM is organized as 128 bytes (1024 bits).

9. Endurance and Data Retention:

   • The device supports up to 1,000,000 write cycles.
   • Data retention is guaranteed for up to 10 years under typical conditions.

10. Handling Precautions:

    • Handle the device with care to avoid electrostatic discharge (ESD).
    • Store the device in a dry environment to prevent moisture damage.

(For reference only)