Details

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BUY IRFP4227PBF https://www.utsource.net/itm/p/12610045.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS				550	V
Gate-Source Voltage	VGSS		-10		10	V
Continuous Drain Current	ID	TC = 25°C			36	A
ID	TC = 100°C				26	A
Pulse Drain Current	IDM	tp = 10 μs, IDM/ID ≤ 2			108	A
Total Dissipation	PTOT	TC = 25°C			330	W
PTOT	TC = 100°C				230	W
Junction Temperature	TJ				175	°C
Storage Temperature Range	TSTG		-65		150	°C
Gate Charge	QG	VGS = 15V, ID = 26A			140	nC
Input Capacitance	Ciss	VDS = 25V, f = 1 MHz			1650	pF
Output Capacitance	Coss	VDS = 25V, f = 1 MHz			190	pF
Reverse Transfer Capacitance	Crss	VDS = 25V, f = 1 MHz			480	pF
Threshold Voltage	VGS(th)	ID = 250 μA	2.0	3.0	4.0	V
On-State Resistance	RDS(on)	VGS = 10V, ID = 26A			0.055	Ω
RDS(on)	VGS = 15V, ID = 26A			0.045	Ω
Turn-On Delay Time	td(on)	VGS = 15V, IG = 10A, ID = 26A			13	ns
Rise Time	tr	VGS = 15V, IG = 10A, ID = 26A			24	ns
Turn-Off Delay Time	td(off)	VGS = 15V, IG = -10A, ID = 26A			35	ns
Fall Time	tf	VGS = 15V, IG = -10A, ID = 26A			32	ns

Instructions for Use:

1. Handling Precautions:

   • The IRFP4227PBF is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling.
   • Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.

2. Mounting:

   • Ensure good thermal management by using a heatsink or heat spreader to dissipate heat effectively.
   • Follow the recommended PCB layout guidelines to minimize parasitic inductances and improve performance.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified range to avoid damage or improper operation.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

4. Operating Conditions:

   • Monitor the junction temperature (T_J) to ensure it remains within safe limits.
   • Ensure that the drain current (I_D) does not exceed the continuous or pulse ratings depending on the application.

5. Testing:

   • Use the test conditions provided in the table for accurate characterization and testing of the device.
   • Verify the device parameters under the specified conditions to ensure reliable operation.

6. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Keep the device in its original packaging until ready for use to protect against static and physical damage.

7. Applications:

   • Suitable for high-frequency switching applications such as power supplies, motor drives, and inverters.
   • Ideal for designs requiring low on-state resistance and fast switching speeds.

(For reference only)