Details

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BUY 2SK2007 https://www.utsource.net/itm/p/12610068.html

Parameter	Symbol	Value	Unit
Drain Voltage	VDS	450	V
Gate-Source Voltage	VGS	卤20	V
Drain Current	ID	10	A
Gate Leakage Current	IGSS	卤100	nA
Transconductance	gfs	6.0	S
Input Capacitance	Ciss	1200	pF
Output Capacitance	Coss	220	pF
Reverse Transfer Capacitance	Crss	390	pF
Junction Temperature	TJ	-55 to 150	掳C
Storage Temperature	Tstg	-55 to 150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2SK2007 with care to avoid damage to the leads and the device.
   • Ensure that the mounting surface is clean and flat to ensure good thermal contact.

2. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified range of 卤20V to avoid damaging the gate.
   • Ensure that the drain-source voltage (V_DS) does not exceed 450V to prevent breakdown.

3. Thermal Management:

   • Use a heatsink if operating at high power levels to maintain the junction temperature (T_J) within the -55掳C to 150掳C range.
   • Ensure adequate ventilation to prevent overheating.

4. Operational Limits:

   • Do not exceed the maximum drain current (I_D) of 10A to avoid excessive heating and potential failure.
   • Monitor the gate leakage current (I_GSS) to ensure it remains within 卤100nA to maintain device reliability.

5. Storage:

   • Store the 2SK2007 in a dry, cool place with temperatures between -55掳C and 150掳C.
   • Avoid exposure to static electricity and handle with ESD protection.

6. Testing:

   • Use a suitable test setup to measure parameters such as transconductance (g_fs), input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss).
   • Follow standard testing procedures to ensure accurate measurements.

7. Safety:

   • Always disconnect power before making any connections or adjustments.
   • Use appropriate safety gear when handling high voltages and currents.

(For reference only)