Details

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BUY MBI6661GSD https://www.utsource.net/itm/p/12610103.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VDD	Operating	3.0	-	5.5	V
Output Current per Channel	IO	Per Channel	-	120	-	mA
Power Dissipation	PD	Continuous Operation	-	-	1400	mW
Operating Temperature	TOPR	Junction Temperature	-40	-	85	掳C
Storage Temperature	TSTG	Storage	-65	-	150	掳C
Input Voltage High	VIH	Input Recognition	2.0	-	VDD	V
Input Voltage Low	VIL	Input Recognition	0	-	0.8	V

Instructions for MBI6661GSD

1. Supply Voltage (VDD):

   • Ensure the supply voltage is within the range of 3.0V to 5.5V to avoid damage or malfunction.

2. Output Current:

   • Each channel can provide up to 120mA of current. Do not exceed this limit to prevent overheating and potential damage.

3. Power Dissipation:

   • The device can dissipate up to 1400mW continuously. Ensure adequate heat sinking if operating near this limit.

4. Temperature Range:

   • Operate the device within -40掳C to 85掳C junction temperature and store it between -65掳C and 150掳C.

5. Input Voltage Levels:

   • For reliable operation, input voltages should be set such that high levels are above 2.0V and low levels are below 0.8V relative to ground.

6. Handling and Storage:

   • Handle with care to avoid electrostatic discharge (ESD) damage. Store in recommended conditions to maintain reliability.

7. Application Notes:

   • Refer to the datasheet for detailed application circuits and recommendations specific to your use case.

(For reference only)