Details

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BUY IRF840BPBF https://www.utsource.net/itm/p/12610108.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-Resistance	RDS(on)	-	0.55	-	惟	VGS = 10V, ID = 1A
Gate-Source Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250渭A
Continuous Drain Current	ID	-	-	8.0	A	TC = 25掳C
Pulse Drain Current	IDM	-	-	32	A	tPW = 10ms, Duty Cycle = 1%
Total Power Dissipation	PD	-	-	95	W	TC = 25掳C
Junction Temperature Range	TJ	-55	-	175	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • The IRF840BPBF is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection equipment.

2. Mounting:

   • Ensure good thermal contact between the device and the heat sink to maximize power dissipation.
   • Torque screw mounting as specified by manufacturer guidelines to avoid damage.

3. Biasing:

   • Apply gate voltage carefully to avoid exceeding the maximum ratings.
   • For optimal performance, operate within the recommended operating conditions.

4. Pulse Operation:

   • When using in pulse mode, ensure that the duty cycle does not exceed the specified limit to prevent overheating.

5. Storage:

   • Store in a dry, cool environment to prevent moisture damage and maintain component integrity.

6. Testing:

   • During testing, do not exceed the maximum drain current or total power dissipation limits to avoid damaging the device.

(For reference only)