Details

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BUY 2SC2073. https://www.utsource.net/itm/p/12610110.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	-	60	V
Emitter-Base Voltage	VEB	-1.5	-	5	V
Collector-Base Voltage	VCB	-	-	60	V
Collector Current	IC	-	100	150	mA
Base Current	IB	-	10	30	mA
Power Dissipation	PT	-	-	625	mW
Operating Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Transition Frequency	fT	-	300	-	MHz
DC Current Gain	hFE	100	300	800	-

Instructions for Use:

1. Mounting:

   • Ensure that the transistor is mounted on a heatsink if it will be operating at or near its maximum power dissipation.
   • Use a thermal compound between the transistor and the heatsink to improve heat transfer.

2. Biasing:

   • The base-emitter junction should be forward-biased, typically with a voltage of around 0.6V to 0.7V.
   • The collector-emitter voltage (V_CE) should not exceed 60V to avoid damage.

3. Current Limiting:

   • Use a current-limiting resistor in series with the base to prevent excessive base current, which can lead to overheating and failure.
   • Ensure that the collector current (I_C) does not exceed 150mA to avoid exceeding the maximum power dissipation.

4. Temperature Considerations:

   • The operating junction temperature (T_J) should be kept below 150掳C to ensure reliable operation.
   • Store the transistor in a temperature range between -55掳C and 150掳C.

5. Handling:

   • Handle the transistor with care to avoid static discharge, which can damage the device.
   • Use proper anti-static precautions when handling and installing the transistor.

6. Testing:

   • Test the transistor using a multimeter or a dedicated transistor tester to verify its parameters before installation.
   • Check for continuity and resistance values to ensure the transistor is functioning correctly.

(For reference only)